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Centrifugal liquid-phase epitaxy is used commercially to make thin layers of silicon, germanium, and gallium arsenide. [17] [18] Centrifugally formed film growth is a process used to form thin layers of materials by using a centrifuge. The process has been used to create silicon for thin-film solar cells [19] [20] and far-infrared ...
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), [1] is a chemical vapour deposition method used to produce single- or polycrystalline thin films.
Pendeo-epitaxy is mainly performed from the vapor phase via MOCVD and HVPE, and initially is used for growing gallium nitride (GaN) microelectronic device structures. In the case of GaN material system, LEO and PE technology was initiated in the late nineties and early 2000s in Prof. R.F. Davis group at NCSU.
This was for a device grown on a GaSb substrate by organometallic vapour phase epitaxy (OMVPE). Devices have been grown by molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE). The internal quantum efficiencies (IQE) of these devices approach 90%, while devices grown by the other two techniques exceed 95%. [30]
Hydride vapour-phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides.
The VLS mechanism circumvents this by introducing a catalytic liquid alloy phase which can rapidly adsorb a vapor to supersaturation levels, and from which crystal growth can subsequently occur from nucleated seeds at the liquid–solid interface. The physical characteristics of nanowires grown in this manner depend, in a controllable way, upon ...
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