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  2. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    Bipolar transistors have four distinct regions of operation, defined by BJT junction biases: [9] [10] Forward-active (or simply active) The base–emitter junction is forward biased and the base–collector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, β F, in

  3. File:Bjt forward active bands.svg - Wikipedia

    en.wikipedia.org/wiki/File:Bjt_forward_active...

    Date/Time Thumbnail Dimensions User Comment; current: 01:52, 23 August 2006: 740 × 400 (87 KB): Matt Britt == Summary == Energy band diagram of a simple NPN bipolar junction transistor in forward-active mode showing electron energy versus position.

  4. Bipolar transistor biasing - Wikipedia

    en.wikipedia.org/wiki/Bipolar_transistor_biasing

    A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.

  5. Biasing - Wikipedia

    en.wikipedia.org/wiki/Biasing

    A graphical representation of the current and voltage properties of a transistor; the bias is selected so that the operating point permits maximum signal amplitude without distortion. In electronics, biasing is the setting of DC (direct current) operating conditions (current and voltage) of an electronic component that processes time-varying ...

  6. Multiple-emitter transistor - Wikipedia

    en.wikipedia.org/wiki/Multiple-emitter_transistor

    A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters . The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be ...

  7. Gummel–Poon model - Wikipedia

    en.wikipedia.org/wiki/Gummel–Poon_model

    Bell System Technical Journal, v49: i5 May-June 1970 on archive.org; Designers-Guide.org comparison paper Xiaochong Cao, J. McMacken, K. Stiles, P. Layman, Juin J. Liou, Adelmo Ortiz-Conde, and S. Moinian, "Comparison of the New VBIC and Conventional Gummel–Poon Bipolar Transistor Models," IEEE Trans-ED 47 #2, Feb. 2000.

  8. Early effect - Wikipedia

    en.wikipedia.org/wiki/Early_effect

    Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width, thereby decreasing the width of the charge carrier portion of the ...

  9. Common emitter - Wikipedia

    en.wikipedia.org/wiki/Common_emitter

    The input signal is applied across the ground and the base circuit of the transistor. The output signal appears across ground and the collector of the transistor. Since the emitter is connected to the ground, it is common to signals, input and output. The common-emitter circuit is the most widely used of junction transistor amplifiers.