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  2. Radio-frequency microelectromechanical system - Wikipedia

    en.wikipedia.org/wiki/Radio-frequency_micro...

    RF MEMS switched capacitors are capacitive fixed-fixed beam switches with a low capacitance ratio. RF MEMS varactors are capacitive fixed-fixed beam switches which are biased below pull-in voltage. Other examples of RF MEMS switches are ohmic cantilever switches, and capacitive single pole N throw (SPNT) switches based on the axial gap wobble ...

  3. Microelectromechanical system oscillator - Wikipedia

    en.wikipedia.org/wiki/Microelectromechanical...

    MEMS clock generators are MEMS timing devices with multiple outputs for systems that need more than a single reference frequency. MEMS oscillators are a valid alternative to older, more established quartz crystal oscillators, offering better resilience against vibration and mechanical shock, and reliability with respect to temperature variation.

  4. Deep reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Deep_reactive-ion_etching

    in DRAM memory circuits, capacitor trenches may be 10–20 μm deep, in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm. in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes.

  5. MEMS - Wikipedia

    en.wikipedia.org/wiki/MEMS

    MEMS are made up of components between 1 and 100 micrometres in size (i.e., 0.001 to 0.1 mm), and MEMS devices generally range in size from 20 micrometres to a millimetre (i.e., 0.02 to 1.0 mm), although components arranged in arrays (e.g., digital micromirror devices) can be more than 1000 mm 2. [1]

  6. Capacitance–voltage profiling - Wikipedia

    en.wikipedia.org/wiki/Capacitance–voltage...

    The depletion region with its ionized charges inside behaves like a capacitor. By varying the voltage applied to the junction it is possible to vary the depletion width . The dependence of the depletion width upon the applied voltage provides information on the semiconductor's internal characteristics, such as its doping profile and ...

  7. Dissipation factor - Wikipedia

    en.wikipedia.org/wiki/Dissipation_factor

    The loss tangent is defined by the angle between the capacitor's impedance vector and the negative reactive axis. If the capacitor is used in an AC circuit, the dissipation factor due to the non-ideal capacitor is expressed as the ratio of the resistive power loss in the ESR to the reactive power oscillating in the capacitor, or

  8. RC time constant - Wikipedia

    en.wikipedia.org/wiki/RC_time_constant

    It is the time required to charge the capacitor, through the resistor, from an initial charge voltage of zero to approximately 63.2% of the value of an applied DC voltage, or to discharge the capacitor through the same resistor to approximately 36.8% of its initial charge voltage.

  9. Armstrong oscillator - Wikipedia

    en.wikipedia.org/wiki/Armstrong_oscillator

    The Armstrong oscillator [1] (also known as the Meissner oscillator [2]) is an electronic oscillator circuit which uses an inductor and capacitor to generate an oscillation. The Meissner patent from 1913 describes a device for generating electrical vibrations, a radio transmitter used for on–off keying .