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A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices , such as an insulated-gate bipolar transistor (IGBT) or a thyristor , its main advantages are high switching speed and good efficiency at low voltages.
LDMOS (laterally-diffused metal-oxide semiconductor) [1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p + silicon epitaxial layers.
The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design. Ambarella Inc. announced the availability of the A7L system-on-a-chip circuit for digital still cameras, providing 1080p60 high-definition video capabilities in ...
The MOSFET is also capable of handling higher power than the JFET. [35] The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [6] The MOSFET thus became the most common type of transistor in computers, electronics, [36] and communications technology (such as smartphones). [37]
This is the 3-D view of a power MOSFET (cross section). The gate layout is meshed, with square-shaped cells: Source: Own work: Author: Cyril BUTTAY:
The power scaling which is now a major driving force in the industry is reflected in the simplified equation shown in the figure—critical parameters are capacitance, power supply and clocking frequency. Key parameters that relate device behavior to system performance include the threshold voltage, driving current and subthreshold characteristics.
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