Search results
Results From The WOW.Com Content Network
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...
Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. [1] [2] For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an ...
The Knudsen cell is used to measure the vapor pressures of a solid with very low vapor pressure. Such a solid forms a vapor at low pressure by sublimation.The vapor slowly effuses through the pinhole, and the loss of mass is proportional to the vapor pressure and can be used to determine this pressure. [1]
Silicon epi wafers were first developed around 1966 and achieved commercial acceptance by the early 1980s. [6] Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal organic chemical vapor deposition (MOCVD), as well as molecular beam epitaxy (MBE). [7]
Illustration of the process. Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), [1] is a chemical vapour deposition method used to produce single- or polycrystalline thin films.
[7] [8] This method is a predecessor of NMR. The invention of the maser in 1957 by James P. Gordon, Herbert J. Zeiger and Charles H. Townes was made possible by a molecular beam of ammonia and a special electrostatic quadrupole focuser. [9] The study of molecular beam led to the development of molecular-beam epitaxy in the 1960s.
John R. Arthur Jr. is an American materials scientist best known as a pioneer of molecular beam epitaxy. Together with Alfred Y. Cho, Arthur pioneered molecular beam epitaxy at Bell Laboratories, where he published a paper in July 1968 that described construction of epitaxial gallium arsenide layers using molecular beam epitaxy.
The Bridgman method is a popular way of producing certain semiconductor crystals such as gallium arsenide, for which the Czochralski method is more difficult. The process can reliably produce single-crystal ingots, but does not necessarily result in uniform properties through the crystal. [1] Diagram of the Bridgman-Stockbarger method