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These locations can become vulnerable to more than one soft error, while scrubbing ensures the checking of the whole memory within a guaranteed time. On some systems, not only the main memory (DRAM-based) is capable of scrubbing but also the CPU caches (SRAM-based). On most systems the scrubbing rates for both can be set independently.
Thus, accessing data stored in DRAM causes memory cells to leak their charges and interact electrically, as a result of high cells density in modern memory, altering the content of nearby memory rows that actually were not addressed in the original memory access. [10]
Memory cells that use fewer than four transistors are possible; however, such 3T [27] [28] or 1T cells are DRAM, not SRAM (even the so-called 1T-SRAM). Access to the cell is enabled by the word line (WL in figure) which controls the two access transistors M 5 and M 6 in 6T SRAM figure (or M 3 and M 4 in 4T SRAM figure) which, in turn, control ...
Thus, accessing data stored in DRAM causes memory cells to leak their charges and interact electrically, as a result of high cell density in modern memory, altering the content of nearby memory rows that actually were not addressed in the original memory access.
SRAM (Static random-access memory) – This stores each bit of data in a circuit called a flip-flop, made of 4 to 6 transistors. SRAM is less dense and more expensive per bit than DRAM, but faster and does not require memory refresh. It is used for smaller cache memories in computers.
The only current memory technology that easily competes with MRAM in terms of performance at comparable density is static random-access memory (SRAM). SRAM consists of a series of transistors arranged in a flip-flop, which will hold one of two states as long as power is applied. Since the transistors have a very low power requirement, their ...
Since then errors have become less visible as simple parity RAM has fallen out of use; either they are invisible as they are not detected, or they are corrected invisibly with ECC RAM. Modern RAM is believed, with much justification, to be reliable, and error-detecting RAM has largely fallen out of use for non-critical applications.
Static random-access memory (SRAM) is electronic memory that does not require refreshing. [2] An SRAM memory cell requires four to six transistors, compared to a single transistor and a capacitor for DRAM; therefore, SRAM circuits require more area on a chip. As a result, data density is much lower in SRAM chips than in DRAM, and gives SRAM a ...