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  2. Man Singh Tyagi - Wikipedia

    en.wikipedia.org/wiki/Man_Singh_Tyagi

    Tyagi wrote one internationally acclaimed book Introduction to Semiconductor Materials and Devices, [5] which is widely used in Electrical Engineering, semiconductor devices and material science undergraduate and postgraduate courses. It was published by John Wiley & Sons on 7 March 1991. M. S. Tyagi: Introduction to Semiconductor Materials and ...

  3. Simon Sze - Wikipedia

    en.wikipedia.org/wiki/Simon_Sze

    Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. [1] He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, [2] now widely used in non-volatile semiconductor memory devices.

  4. Semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device

    A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.

  5. Light-emitting diode physics - Wikipedia

    en.wikipedia.org/wiki/Light-emitting_diode_physics

    Since these materials have a high index of refraction, [note 1] design features of the devices such as special optical coatings and die shape are required to efficiently emit light. A LED is a long-lived light source, but certain mechanisms can cause slow loss of efficiency of the device or sudden failure.

  6. BARITT diode - Wikipedia

    en.wikipedia.org/wiki/BARITT_diode

    The BARITT diode (barrier injection transit-time) is a high frequency semiconductor component of microelectronics. A related component is the DOVETT diode. The BARITT diode uses injection and transit-time properties of minority carriers to produce a negative resistance at microwave frequencies. About the biased forward boundary layer, the ...

  7. Metal–semiconductor junction - Wikipedia

    en.wikipedia.org/wiki/Metal–semiconductor_junction

    The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] (In contrast, a rectifying semiconductorsemiconductor junction, the most common semiconductor device today, is known as a p–n junction.)

  8. Quantum well - Wikipedia

    en.wikipedia.org/wiki/Quantum_well

    This is because quantum well devices require structures that are of high purity with few defects. Therefore, having great control over the growth of these heterostructures allows for the development of semiconductor devices that can have very fine-tuned properties. [4] Quantum wells and semiconductor physics has been a hot topic in physics ...

  9. Schottky barrier - Wikipedia

    en.wikipedia.org/wiki/Schottky_barrier

    In a rectifying Schottky barrier, the barrier is high enough that there is a depletion region in the semiconductor, near the interface. This gives the barrier a high resistance when small voltage biases are applied to it.