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Tyagi wrote one internationally acclaimed book Introduction to Semiconductor Materials and Devices, [5] which is widely used in Electrical Engineering, semiconductor devices and material science undergraduate and postgraduate courses. It was published by John Wiley & Sons on 7 March 1991. M. S. Tyagi: Introduction to Semiconductor Materials and ...
Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. [1] He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, [2] now widely used in non-volatile semiconductor memory devices.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
Since these materials have a high index of refraction, [note 1] design features of the devices such as special optical coatings and die shape are required to efficiently emit light. A LED is a long-lived light source, but certain mechanisms can cause slow loss of efficiency of the device or sudden failure.
The BARITT diode (barrier injection transit-time) is a high frequency semiconductor component of microelectronics. A related component is the DOVETT diode. The BARITT diode uses injection and transit-time properties of minority carriers to produce a negative resistance at microwave frequencies. About the biased forward boundary layer, the ...
The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.)
This is because quantum well devices require structures that are of high purity with few defects. Therefore, having great control over the growth of these heterostructures allows for the development of semiconductor devices that can have very fine-tuned properties. [4] Quantum wells and semiconductor physics has been a hot topic in physics ...
In a rectifying Schottky barrier, the barrier is high enough that there is a depletion region in the semiconductor, near the interface. This gives the barrier a high resistance when small voltage biases are applied to it.