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Double Data Rate 2 Synchronous Dynamic Random-Access Memory (DDR2 SDRAM) is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) interface. It is a JEDEC standard (JESD79-2); first published in September 2003. [2] DDR2 succeeded the original DDR SDRAM specification, and was itself succeeded by DDR3 SDRAM in 2007.
DDR2 started to be effective by the end of 2004, as modules with lower latencies became available. [19] Memory manufacturers stated that it was impractical to mass produce DDR1 memory with effective transfer rates in excess of 400 MHz (i.e. 400 MT/s and 200 MHz external clock) due to internal speed limitations.
The DDR2 RAM that it is compatible with is known to be double-pumped and to have an Input/Output Bus twice that of the true FSB frequency (effectively transferring data 4 times a clock cycle), so to run the system synchronously (see front-side bus) the type of RAM that is appropriate is quadruple 266 MHz, or DDR2-1066 (PC2-8400 or PC2-8500 ...
A memory rank is a set of DRAM chips connected to the same chip select, which are therefore accessed simultaneously. In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate (the data pins are shared across ranks).
High Bandwidth Memory (HBM) is a high-performance RAM interface for 3D-stacked SDRAM from Samsung, AMD and SK Hynix. It is designed to be used in conjunction with high-performance graphics accelerators and network devices. [39] The first HBM memory chip was produced by SK Hynix in 2013. [40]
Four sticks of G.SKILL TridentZ Memory. G.SKILL is known for its range of DDR, [4] DDR2, [5] DDR3, [6] DDR4 [6] and DDR5 [7] computer memory. RAM is available in single-channel, dual-channel, triple-channel and quad-channel packs for desktops, workstations, HTPC, as well as netbooks and laptops.