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Under the functional failure mode approach, the actual functional failure modes of the product are identified during a DFMEA. During the detailed FMEDA, each component failure mode is mapped to a functional failure mode. The functional failure modes are then categorized according to product failure mode in a particular application. [13]
Failure mode and effects analysis (FMEA; often written with "failure modes" in plural) is the process of reviewing as many components, assemblies, and subsystems as possible to identify potential failure modes in a system and their causes and effects. For each component, the failure modes and their resulting effects on the rest of the system ...
The failure mode may then be charted on a criticality matrix using severity code as one axis and probability level code as the other. For quantitative assessment, modal criticality number is calculated for each failure mode of each item, and item criticality number is calculated for each item. The criticality numbers are computed using the ...
The Common Mode Analysis (CMA) looks at the redundant critical components to find failure modes which can cause all to fail at about the same time. Software is always included in this analysis as well as looking for manufacturing errors or "bad lot" components. A failure such as a bad resistor in all flight control computers would be addressed ...
Thermal shock resistance measures can be used for material selection in applications subject to rapid temperature changes. The maximum temperature jump, , sustainable by a material can be defined for strength-controlled models by: [4] [3] = where is the failure stress (which can be yield or fracture stress), is the coefficient of thermal expansion, is the Young's modulus, and is a constant ...
Design review based on failure mode (DRBFM) is a tool originally developed by the Toyota Motor Corporation. This tool was developed based on the philosophy that design problems occur when changes are made to existing engineering designs that have already been proven successful.
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).
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