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[10] Integrated bipolar static random-access memory (SRAM) was invented by Robert H. Norman at Fairchild Semiconductor in 1963. [17] It was followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. [10] SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data. [18]
The "RAM" part of the real RAM model name stands for "random-access machine". This is a model of computing that resembles a simplified version of a standard computer architecture. It consists of a stored program, a computer memory unit consisting of an array of cells, and a central processing unit with a bounded number of registers. Each memory ...
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
Computational RAM (C-RAM) is random-access memory with processing elements integrated on the same chip. This enables C-RAM to be used as a SIMD computer. It also can be used to more efficiently use memory bandwidth within a memory chip. The general technique of doing computations in memory is called Processing-In-Memory (PIM).
The memory is divided into several equally sized but independent sections called banks, allowing the device to operate on a memory access command in each bank simultaneously and speed up access in an interleaved fashion. This allows SDRAMs to achieve greater concurrency and higher data transfer rates than asynchronous DRAMs could.
Dynamic Random Access Memory or (RAM) was first invented in 1968 by Robert Dennard. [2] He was born in Texas and is an engineer who created one of the first models of (RAM) which was first called Dynamic Random Access Memory. His invention led to computers being able to reach a new era of technological advancement.