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A p–n junction diode. The circuit symbol is also shown. A p–n junction is a combination of two types of semiconductor materials, p-type and n-type, in a single crystal. The "n" (negative) side contains freely-moving electrons, while the "p" (positive) side contains freely-moving electron holes.
At absolute zero temperature, all of the electrons have energy below the Fermi level; but at non-zero temperatures the energy levels are filled following a Fermi-Dirac distribution. In undoped semiconductors the Fermi level lies in the middle of a forbidden band or band gap between two allowed bands called the valence band and the conduction ...
In conducting mediums, particles serve to carry charge. In many metals, the charge carriers are electrons. One or two of the valence electrons from each atom are able to move about freely within the crystal structure of the metal. [4] The free electrons are referred to as conduction electrons, and the cloud of free electrons is called a Fermi gas.
The first p–n junction in silicon was observed by Russell Ohl about 1941 when a specimen was found to be light-sensitive, with a sharp boundary between p-type impurity at one end and n-type at the other. A slice cut from the specimen at the p–n boundary developed a voltage when exposed to light.
Joining n-type silicon to p-type silicon creates a p–n junction with a common Fermi level; electrons flow from n to p, while holes flow from p to n, creating a voltage drop. This p–n junction thus acts as a diode that can rectify alternating current that allows current to pass more easily one way than the other. A transistor is an n–p–n ...
Lithium has two electrons in the 1s-subshell and one in the (higher-energy) 2s-subshell, so its configuration is written 1s 2 2s 1 (pronounced "one-s-two, two-s-one"). Phosphorus (atomic number 15) is as follows: 1s 2 2s 2 2p 6 3s 2 3p 3. For atoms with many electrons, this notation can become lengthy and so an abbreviated notation is used.
This means that the two shared electrons are closer to one of the atoms than the other, creating an imbalance of charge. Such bonds occur between two atoms with moderately different electronegativities and give rise to dipole–dipole interactions. The electronegativity difference between the two atoms in these bonds is 0.3 to 1.7.
These excited electrons diffuse, and some reach the rectifying junction (usually a diode p–n junction) where they are accelerated into the n-type semiconductor material by the built-in potential (Galvani potential). This generates an electromotive force and an electric current, and thus some of the light energy is converted into electric energy