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The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
The MOSFET, also known as the MOS transistor, was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [46] It revolutionized the wider electronics industry , [ 85 ] including power electronics , [ 86 ] consumer electronics , control systems, and computers . [ 87 ]
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
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The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. [1] JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors , or to build amplifiers .
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