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The power MOSFET is the most common power device in the world, due to its low gate drive power, fast switching speed, and advanced paralleling capability. [16] It has a wide range of power electronic applications, such as portable information appliances , power integrated circuits, cell phones , notebook computers , and the communications ...
Silicon Carbide Power Devices World Scientific Publishing Company 2006 978-981-256-605-8 5 Fundamentals of Power Semiconductor Devices Springer 2018 978-3319939872 6 The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor Elsevier 2022 978-0323999120 7 Modern Silicon Carbide Power Devices
Hiroyuki Matsunami (松波弘之 born June 5, 1939) is a Japanese engineer, researcher and educator. He was awarded the IEEE Edison Medal in 2023 for his pioneering contributions to the development of the material silicon carbide and its applications in electronic power devices. [1]
Silicon carbide (SiC), also known as carborundum (/ ˌ k ɑːr b ə ˈ r ʌ n d əm /), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor , it occurs in nature as the extremely rare mineral moissanite , but has been mass-produced as a powder and crystal since 1893 for use as an abrasive .
Later, Hans W. Becke and Carl F. Wheatley developed a similar device claiming non-latch-up. They patented the device in 1980, referring to it as "power MOSFET with an anode region" for which "no thyristor action occurs under any device operating conditions". [17] [18] A. Nakagawa et al. invented the device design concept of non-latch-up IGBTs ...
Silicon carbide (SiC) is also gaining popularity in power ICs and has found some application as the raw material for blue LEDs and is being investigated for use in semiconductor devices that could withstand very high operating temperatures and environments with the presence of significant levels of ionizing radiation.
Silicon carbide has a high thermal conductivity, and temperature has little influence on its switching and thermal characteristics. With special packaging, silicon carbide Schottky diodes can operate at junction temperatures of over 500 K (about 200 °C), which allows passive radiative cooling in aerospace applications.
An HVDC thyristor valve tower 16.8 m tall in a hall at Baltic Cable AB in Sweden A battery charger is an example of a piece of power electronics. Power grid designer in front of a newly installed 880kV thyristor valve array A PCs power supply is an example of a piece of power electronics, whether inside or outside of the cabinet.