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A group of a transistor's parameters sufficient to predict circuit gain, input impedance, and output impedance are components in its small-signal model. A number of different two-port network parameter sets may be used to model a transistor. These include: Transmission parameters (T-parameters), Hybrid-parameters (h-parameters),
and the h-parameters are given by – h ix = h ie – The input impedance of the transistor (corresponding to the emitter resistance r e). h rx = h re – Represents the dependence of the transistor's I B –V BE curve on the value of V CE. It is usually very small and is often neglected (assumed to be zero). h fx = h fe – The current-gain of ...
Full hybrid-pi model. The full model introduces the virtual terminal, B′, so that the base spreading resistance, r bb, (the bulk resistance between the base contact and the active region of the base under the emitter) and r b′e (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately.
The h refers to its being an h-parameter, a set of parameters named for their origin in a hybrid equivalent circuit model (see above). As with all h parameters, the choice of lower case or capitals for the letters that follow the "h" is significant; lower-case signifies "small signal" parameters, that is, the slope the particular relationship ...
In this model the three terminal transistor is considered to be a two port network, one of its terminals being common to both ports. The [h] parameters are quite different depending on which terminal is chosen as the common one. The most important parameter for transistors is usually the forward current gain, h 21, in the common emitter ...
A small signal model consists of a small signal (having zero average value, for example a sinusoid, but any AC signal could be used) superimposed on a bias signal (or superimposed on a DC constant signal) such that the sum of the small signal plus the bias signal gives the total signal which is exactly equal to the original (large) signal to be ...
Pages in category "Transistors" The following 21 pages are in this category, out of 21 total. ... H. H-parameter model; High-κ dielectric; History of the transistor; M.
Therefore, circuit simulators normally use more empirical models (often called compact models) that do not directly model the underlying physics. For example, inversion-layer mobility modeling , or the modeling of mobility and its dependence on physical parameters, ambient and operating conditions is an important topic both for TCAD (technology ...