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The resulting mixture is used to clean organic residues off substrates, for example silicon wafers. [1] Because the mixture is a strong oxidizing agent, it will decompose most organic matter, and it will also hydroxylate most surfaces (by adding –OH groups), making them highly hydrophilic (water-compatible).
Etching tanks used to perform Piranha, hydrofluoric acid or RCA clean on 4-inch wafer batches at LAAS technological facility in Toulouse, France. Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer ...
The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.
RCA-1 clean in ammonia-peroxide solution removes organic contamination and particles; RCA-2 cleaning in hydrogen chloride-peroxide mixture removes metallic impurities. Sulfuric acid-peroxide mixture (a.k.a. Piranha) removes organics. Hydrogen fluoride removes native oxide from silicon surface. These are all wet cleaning steps in solutions.
During the transition from 200 mm to 300 mm wafers in 2001, many bridge tools were used which could process both 200 mm and 300 mm wafers. [74] At the time, 18 companies could manufacture chips in the leading edge 130nm process. [75] In 2006, 450 mm wafers were expected to be adopted in 2012, and 675 mm wafers were expected to be used by 2021.
Piranha solution in particular constitutes quite a harsh treatment that can potentially damage the integrity of the silicon surface. Finlayson-Pitts et al. investigated the effect of certain treatments on silicon and concluded that both the roughness (3-5 Å) and the presence of scattered large particles were preserved after 1 cycle of plasma ...
The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber, and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for etching silicon.
In photolithography, photoresist compounds are used create a mask on the surface of a silicon wafer. The mask allows for precise control over the doping and etching processes used to form devices on silicon wafers. It is important for the mask to hold up to chemical attack during the etching process.