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Magnetic-core memory was invented in 1947 and developed up until the mid-1970s. It became a widespread form of random-access memory, relying on an array of magnetized rings. By changing the sense of each ring's magnetization, data could be stored with one bit stored per ring.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
v. t. e. Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM (dynamic random-access memory): SRAM will hold its data permanently in the ...
Delay-line memory was limited to a capacity of up to a few thousand bits. Two alternatives to the delay line, the Williams tube and Selectron tube, originated in 1946, both using electron beams in glass tubes as means of storage. Using cathode-ray tubes, Fred Williams invented the Williams tube, which was the first random-access computer memory ...
The memory cell is the fundamental building block of memory. It can be implemented using different technologies, such as bipolar, MOS, and other semiconductor devices. It can also be built from magnetic material such as ferrite cores or magnetic bubbles. [1] Regardless of the implementation technology used, the purpose of the binary memory cell ...
DDR SDRAM. Double Data Rate Synchronous Dynamic Random-Access Memory (DDR SDRAM) is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) class of memory integrated circuits used in computers. DDR SDRAM, also retroactively called DDR1 SDRAM, has been superseded by DDR2 SDRAM, DDR3 SDRAM, DDR4 SDRAM and DDR5 SDRAM.
The prefetch architecture takes advantage of the specific characteristics of memory accesses to DRAM. Typical DRAM memory operations involve three phases: bitline precharge, row access, column access. Row access is the heart of a read operation, as it involves the careful sensing of the tiny signals in DRAM memory cells; it is the slowest phase ...
v. t. e. In computing, magnetic-core memory is a form of random-access memory. It predominated for roughly 20 years between 1955 and 1975, and is often just called core memory, or, informally, core. Core memory uses toroids (rings) of a hard magnetic material (usually a semi-hard ferrite). Each core stores one bit of information.