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  2. Dual-ported video RAM - Wikipedia

    en.wikipedia.org/wiki/Dual-ported_video_RAM

    Dual-ported video RAM (VRAM) is a dual-ported RAM variant of dynamic RAM (DRAM), which was once commonly used to store the Framebuffer in Graphics card, . Dual-ported RAM allows the CPU to read and write data to memory as if it were a conventional DRAM chip, while adding a second port that reads out data.

  3. Memory timings - Wikipedia

    en.wikipedia.org/wiki/Memory_timings

    For example, DDR3-2000 memory has a 1000 MHz clock frequency, which yields a 1 ns clock cycle. With this 1 ns clock, a CAS latency of 7 gives an absolute CAS latency of 7 ns. Faster DDR3-2666 memory (with a 1333 MHz clock, or 0.75 ns exactly; the 1333 is rounded) may have a larger CAS latency of 9, but at a clock frequency of 1333 MHz the ...

  4. Video random-access memory - Wikipedia

    en.wikipedia.org/wiki/Video_random-access_memory

    Video random-access memory (VRAM) is dedicated computer memory used to store the pixels and other graphics data as a framebuffer to be rendered on a computer monitor. [1] It often uses a different technology than other computer memory, in order to be read quickly for display on a screen.

  5. DDR4 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR4_SDRAM

    2011: In January, Samsung announced the completion and release for testing of a 2 GB [1] DDR4 DRAM module based on a process between 30 and 39 nm. [28] It has a maximum data transfer rate of 2133 MT/s at 1.2 V, uses pseudo open drain technology (adapted from graphics DDR memory [29]) and draws 40% less power than an equivalent DDR3 module. [28 ...

  6. ThinkPad W series - Wikipedia

    en.wikipedia.org/wiki/ThinkPad_W_series

    The W-series laptops were introduced by Lenovo as workstation-class laptops with their own letter designation, a descendant of prior ThinkPad T series models suffixed with 'p'. [2] The W series laptops were launched in 2008, at the same time as Intel Centrino 2, marking an overhaul of Lenovo's product lineup. [ 2 ]

  7. Static random-access memory - Wikipedia

    en.wikipedia.org/wiki/Static_random-access_memory

    To speed up reading, a more complex process is used in practice: The read cycle is started by precharging both bit lines BL and BL, to high (logic 1) voltage. Then asserting the word line WL enables both the access transistors M 5 and M 6 , which causes one bit line BL voltage to slightly drop.

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