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When silicon (Si), having four valence electrons, is doped with elements from group III of the periodic table, such as boron (B) and aluminium (Al), both having three valence electrons, a p-type semiconductor is formed. These dopant elements represent trivalent impurities. Other trivalent dopants include indium (In) and gallium (Ga). [1]
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
The conductivity of semiconductors may easily be modified by introducing impurities into their crystal lattice. The process of adding controlled impurities to a semiconductor is known as doping . The amount of impurity, or dopant, added to an intrinsic (pure) semiconductor varies its level of conductivity. [ 26 ]
1 part of ammonia water, (29% by weight of NH 3) 1 part of aqueous H 2 O 2 (hydrogen peroxide, 30%) at 75 or 80 °C [1] typically for 10 minutes. This base-peroxide mixture removes organic residues. Particles are also very effectively removed, even insoluble particles, since SC-1 modifies the surface and particle zeta potentials and causes them ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
In semiconductors, electrical conduction is due to the mobile charge carriers, electrons or holes which are provided by impurities or dopant atoms in the crystal. In an extrinsic semiconductor, the concentration of doping atoms in the crystal largely determines the density of charge carriers, which determines its electrical conductivity , as ...
Holes in a P-side region near to the interface are also gone by a similar reason. As a result, majority charge carriers (free electrons for the N-type semiconductor, and holes for the P-type semiconductor) are depleted in the region around the junction interface, so this region is called the depletion region or depletion zone. Due to the ...
In semiconductor physics, a donor is a dopant atom that, when added to a semiconductor, can form a n-type region. Phosphorus atom acting as a donor in the simplified 2D silicon lattice. For example, when silicon (Si), having four valence electrons , is to be doped as a n-type semiconductor , elements from group V like phosphorus (P) or arsenic ...