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  2. Molecular scale electronics - Wikipedia

    en.wikipedia.org/wiki/Molecular_scale_electronics

    The theory of single-molecule devices is especially interesting since the system under consideration is an open quantum system in nonequilibrium (driven by voltage). In the low bias voltage regime, the nonequilibrium nature of the molecular junction can be ignored, and the current-voltage traits of the device can be calculated using the ...

  3. Point-contact transistor - Wikipedia

    en.wikipedia.org/wiki/Point-contact_transistor

    The common base current gain (or α) of a point-contact transistor is usually around 2 to 3, [4] whereas α of bipolar junction transistor (BJT) cannot exceed 1. The common emitter current gain (or β) of a point-contact transistor does not usually exceed 1, [4] whereas β of a BJT is typically between 20 and 200. Negative differential ...

  4. Transistor model - Wikipedia

    en.wikipedia.org/wiki/Transistor_model

    Transistor models are used for almost all modern electronic design work. Analog circuit simulators such as SPICE use models to predict the behavior of a design. Most design work is related to integrated circuit designs which have a very large tooling cost, primarily for the photomasks used to create the devices, and there is a large economic incentive to get the design working without any ...

  5. Atomic, molecular, and optical physics - Wikipedia

    en.wikipedia.org/wiki/Atomic,_molecular,_and...

    AMO theory includes classical, semi-classical and quantum treatments. Typically, the theory and applications of emission, absorption, scattering of electromagnetic radiation (light) from excited atoms and molecules, analysis of spectroscopy, generation of lasers and masers, and the optical properties of matter in general, fall into these ...

  6. Semiconductor device modeling - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device_modeling

    Therefore, circuit simulators normally use more empirical models (often called compact models) that do not directly model the underlying physics. For example, inversion-layer mobility modeling , or the modeling of mobility and its dependence on physical parameters, ambient and operating conditions is an important topic both for TCAD (technology ...

  7. BSIM - Wikipedia

    en.wikipedia.org/wiki/BSIM

    BSIM (Berkeley Short-channel IGFET Model) [1] refers to a family of MOSFET transistor models for integrated circuit design. It also refers to the BSIM group located in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley, that develops these models.

  8. Template:Atomic models - Wikipedia

    en.wikipedia.org/wiki/Template:Atomic_models

    A navigational box that can be placed at the bottom of articles. Template parameters [Edit template data] Parameter Description Type Status State state The initial visibility of the navbox Suggested values collapsed expanded autocollapse String suggested Template transclusions Transclusion maintenance Check completeness of transclusions The above documentation is transcluded from Template ...

  9. Single-atom transistor - Wikipedia

    en.wikipedia.org/wiki/Single-atom_transistor

    A single-atom transistor is a device that can open and close an electrical circuit by the controlled and reversible repositioning of one single atom.The single-atom transistor was invented and first demonstrated in 2002 by Dr. Fangqing Xie in Prof. Thomas Schimmel's Group at the Karlsruhe Institute of Technology (former University of Karlsruhe). [1]