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The damage caused can be repaired by subjecting the crystal to high temperature. This process is called annealing. Furnace anneals may be integrated into other furnace processing steps, such as oxidations, or may be processed on their own. Furnace anneals are performed by equipment especially built to heat semiconductor wafers. Furnaces are ...
The high temperature of annealing may result in oxidation of the metal's surface, resulting in scale. If scale must be avoided, annealing is carried out in a special atmosphere, such as with endothermic gas (a mixture of carbon monoxide, hydrogen gas, and nitrogen gas). Annealing is also done in forming gas, a mixture of hydrogen and nitrogen.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Most silicides are produced by direct combination of the elements. [1]A silicide prepared by a self-aligned process is called a salicide.This is a process in which silicide contacts are formed only in those areas in which deposited metal (which after annealing becomes a metal component of the silicide) is in direct contact with silicon, hence, the process is self-aligned.
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
CuGaO 2 exists in two main polymorphs, α and β.The α form has the delafossite crystal structure and can be prepared by reacting Cu 2 O with Ga 2 O 3 at high temperatures. The β form has a wurtzite-like crystal structure (space group Pna2 1); it is metastable, but exhibits a long-term stability at temperatures below 300 °C. [4]
The adhesive bonding with organic materials, i.e. BCB or SU-8, has simple process properties and the ability to form high aspect ratio micro structures. The bonding procedure is based on polymerization reaction of organic molecules to form long polymer chains during annealing. This cross-link reaction forms BCB and SU-8 to a solid polymer layer ...
PtSi is a semiconductor and a Schottky barrier with high stability and good sensitivity, and can be used in infrared detection, thermal imaging, or ohmic and Schottky contacts. [9] Platinum silicide was most widely studied and used in the 1980s and 90s, but has become less commonly used, due to its low quantum efficiency .