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Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as Boron and Antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
Modulation doping is a technique for fabricating semiconductors such that the free charge carriers are spatially separated from the donors. Because this eliminates scattering from the donors, modulation-doped semiconductors have very high carrier mobilities .
In semiconductor physics, a donor is a dopant atom that, when added to a semiconductor, can form a n-type region. Phosphorus atom acting as a donor in the simplified 2D silicon lattice. For example, when silicon (Si), having four valence electrons , is to be doped as a n-type semiconductor , elements from group V like phosphorus (P) or arsenic ...
An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor.
A semiconductor is a material that is between the conductor and insulator in ability to conduct electrical current. [1] In many cases their conducting properties may be altered in useful ways by introducing impurities (" doping ") into the crystal structure .
Pure semiconductors that have been altered by the presence of dopants are known as extrinsic semiconductors (see intrinsic semiconductor). Dopants are introduced into semiconductors in a variety of techniques: solid sources, gases, spin on liquid, and ion implanting. See ion implantation, surface diffusion, and solid sources footnote.
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Semiconductor doping with boron, phosphorus, or arsenic is a common application of ion implantation. When implanted in a semiconductor, each dopant atom can create a charge carrier in the semiconductor after annealing. A hole can be created for a p-type dopant, and an electron for an n-type dopant. This modifies the conductivity of the ...