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The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters . The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be ...
The 2N2222 is considered a very common transistor, [1] [2] [3] and is used as an exemplar of an NPN transistor. It is frequently used as a small-signal transistor, [4] [5] and it remains a small general purpose transistor [6] of enduring popularity. [7] [8] [9] The 2N2222 was part of a family of devices described by Motorola at a 1962 IRE ...
Figure 1: Basic NPN common collector circuit (neglecting biasing details). In electronics , a common collector amplifier (also known as an emitter follower ) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies , typically used as a voltage buffer .
Ebers–Moll model for an NPN transistor. [28] I B, I C and I E are the base, collector and emitter currents; I CD and I ED are the collector and emitter diode currents; α F and α R are the forward and reverse common-base current gains. Ebers–Moll model for a PNP transistor Approximated Ebers–Moll model for an NPN transistor in the ...
A Darlington transistor (also known as Darlington pair) achieves very high current amplification by connecting two bipolar transistors in direct DC coupling so the current amplified by the first transistor is amplified further by the second one. The resultant current gain is the product of those of the two component transistors:
The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so may be more commonly used for these outputs. Open outputs using PNP and pMOS transistors will use the opposite internal voltage rail used by NPN and nMOS transistors.