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Processor power dissipation or processing unit power dissipation is the process in which computer processors consume electrical energy, and dissipate this energy in the form of heat due to the resistance in the electronic circuits.
The heat dissipation in integrated circuits problem has gained an increasing interest in recent years due to the miniaturization of semiconductor devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
The primary advantage of superconducting computing is improved power efficiency over conventional CMOS technology. Much of the power consumed, and heat dissipated, by conventional processors comes from moving information between logic elements rather than the actual logic operations.
Junction temperature, short for transistor junction temperature, [1] is the highest operating temperature of the actual semiconductor in an electronic device. In operation, it is higher than case temperature and the temperature of the part's exterior.
Hence, once we know the thermal power to be dissipated (Pd), the maximum allowed case temperature (Tc) of the CPU and the maximum expected ambient temperature (Ta) of the air entering the cooling fans, we can determine the fundamental characteristics of the required Heat sink, i.e. its thermal resistance Rca, as:
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
The term "hot electron" comes from the effective temperature term used when modelling carrier density (i.e., with a Fermi-Dirac function) and does not refer to the bulk temperature of the semiconductor (which can be physically cold, although the warmer it is, the higher the population of hot electrons it will contain all else being equal).
To add to the design challenge, device properties often vary between each processed semiconductor wafer. Device properties can even vary significantly across each individual IC due to doping gradients. The underlying cause of this variability is that many semiconductor devices are highly sensitive to uncontrollable random variances in the process.