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DDR4 RAM operates at a voltage of 1.2 V and supports frequencies between 800 and 1600 MHz (DDR4-1600 through DDR4-3200). Compared to DDR3, which operates at 1.5 V with frequencies from 400 to 1067 MHz (DDR3-800 through DDR3-2133), DDR4 offers better performance and energy efficiency .
A limit switch with a roller-lever operator; this is installed on a gate on a canal lock, and indicates the position of a gate to a control system A limit switch mounted on a moving part of a bridge In electrical engineering , a limit switch is a switch operated by the motion of a machine part or the presence of an object.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
The maximum random access memory (RAM) installed in any computer system is limited by hardware, software and economic factors. The hardware may have a limited number of address bus bits, limited by the processor package or design of the system. Some of the address space may be shared between RAM, peripherals, and read-only memory.
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .
Current limiting is the practice of imposing a limit on the current that may be delivered to a load to protect the circuit generating or transmitting the current from harmful effects due to a short-circuit or overload. The term "current limiting" is also used to define a type of overcurrent protective device.