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Nonideal p–n diode current-voltage characteristics. The ideal diode has zero resistance for the forward bias polarity, and infinite resistance (conducts zero current) for the reverse voltage polarity; if connected in an alternating current circuit, the semiconductor diode acts as an electrical rectifier. The semiconductor diode is not ideal.
p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
In normal operation the base-emitter junction does indeed form a diode, but in most cases it is undesirable for the base-collector junction to behave as a diode. If a sufficient forward bias is placed on this junction it will form a parasitic diode structure, and current will flow from base to collector.
A p–n junction diode in low forward bias mode. The depletion width decreases as voltage increases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different quasi Fermi levels for conduction band and valence band in n and p regions (red curves).
A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves). A depletion region forms instantaneously across a p–n junction.
Band diagram for p–n junction at equilibrium. The depletion region is shaded. φ B denotes band shift for holes and charges level. See P–n diode. The inner workings of a light emitting diode, showing circuit (top) and band diagram when a bias voltage is applied (bottom).
The n-p-n-p structure is formed by the source of the NMOS, the p-substrate, the n-well and the source of the PMOS. A circuit equivalent is also shown. When one of the two bipolar transistors gets forward biased (due to current flowing through the well, or substrate), it feeds the base of the other transistor.