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In June 2022, Intel presented some details about the Intel 4 process (known as "7 nm" before renaming in 2021): the company's first process to use EUV, 2x higher transistor density compared to Intel 7 (known as "10 nm" ESF (Enhanced Super Fin) before the renaming), use of cobalt-clad copper for the finest five layers of interconnect, 21.5% ...
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
Apple A12 and Huawei Kirin 980 mobile processors, both released in 2018, use 7 nm chips manufactured by TSMC. [127] AMD began using TSMC 7 nm starting with the Vega 20 GPU in November 2018, [128] with Zen 2-based CPUs and APUs from July 2019, [129] and for both PlayStation 5 [130] and Xbox Series X/S [131] consoles' APUs, released both in ...
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.
Different FinFET structures, which can be modeled by BSIM-CMG. BSIMCMG106.0.0, [65] officially released on March 1, 2012 by UC Berkeley BSIM Group, is the first standard model for FinFETs. BSIM-CMG is implemented in Verilog-A. Physical surface-potential-based formulations are derived for both intrinsic and extrinsic models with finite body doping.