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At IEDM 2019, TSMC revealed two versions of 5 nm, a DUV version with a 5.5-track cell, and an (official) EUV version with a 6-track cell. [24] [25] In December 2019, TSMC announced an average yield of approximately 80%, with a peak yield per wafer of over 90% for their "5 nm" test chips with a die size of 17.92 mm 2. [26]
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
Fujio Masuoka, Hiroshi Takato, Kazumasa Sunouchi, N. Okabe Toshiba [54] [55] [56] December 1989: 200 nm: FinFET: Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda Hitachi Central Research Laboratory [57] [58] [59] December 1998: 17 nm: FinFET Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor: University of California (Berkeley ...
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
In 1998, the team developed the first N-channel FinFETs and successfully fabricated devices down to a 17 nm process. The following year, they developed the first P-channel FinFETs. [12] They coined the term "FinFET" (fin field-effect transistor) in a December 2000 paper. [13] In current usage the term FinFET has a less precise definition.
As gate voltages scaled down with transistor size, the room for gate voltage swing below the threshold voltage drastically reduced, and the subthreshold conduction became a significant part of the off-state leakage of a transistor. [4] [5] For a technology generation with threshold voltage of 0.2 V, subthreshold conduction, along with other ...