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With the introduction of high κ metal gates, a new degradation mechanism has become more important, referred to as PBTI (for positive bias temperature instabilities), which affects nMOS transistor when positively biased. In this case, no interface states are generated and 100% of the Vth degradation may be recovered.
Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.
The VLSI handbook (2nd ed.). CRC Press. ISBN 978-0-8493-4199-1. chapter 76. Brian Bailey; Grant Martin (2010). ESL Models and Their Application: Electronic System Level Design and Verification in Practice. Springer. ISBN 978-1-4419-0964-0. Frank Rogin; Rolf Drechsler (2010). Debugging at the Electronic System Level. Springer. ISBN 978-90-481 ...
A DARPA project which ran concurrently, the VLSI Project, having begun two years earlier in 1978, contributed BSD Unix, the RISC processor, the MOSIS research design fab, and greatly furthered the Mead and Conway revolution in VLSI design automation. By contrast, the VHSIC program was comparatively less cost-effective for the funds invested ...
In semiconductor design, standard-cell methodology is a method of designing application-specific integrated circuits (ASICs) with mostly digital-logic features. Standard-cell methodology is an example of design abstraction, whereby a low-level very-large-scale integration layout is encapsulated into an abstract logic representation (such as a NAND gate).
The effect of the trench edge has given rise to what has recently been termed the "reverse narrow channel effect" [3] or "inverse narrow width effect". [4] Basically, due to the electric field enhancement at the edge, it is easier to form a conducting channel (by inversion) at a lower voltage.
President-elect Donald Trump has promised to target immigrants with criminal records as he launches a "mass deportation" to remove millions of people from the country.
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).