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  2. Negative-bias temperature instability - Wikipedia

    en.wikipedia.org/wiki/Negative-bias_temperature...

    With the introduction of high κ metal gates, a new degradation mechanism has become more important, referred to as PBTI (for positive bias temperature instabilities), which affects nMOS transistor when positively biased. In this case, no interface states are generated and 100% of the Vth degradation may be recovered.

  3. Mead–Conway VLSI chip design revolution - Wikipedia

    en.wikipedia.org/wiki/Mead–Conway_VLSI_chip...

    The Mead–Conway VLSI chip design revolution, or Mead and Conway revolution, was a very-large-scale integration design revolution starting in 1978 which resulted in a worldwide restructuring of academic materials in computer science and electrical engineering education, and was paramount for the development of industries based on the application of microelectronics.

  4. Very-large-scale integration - Wikipedia

    en.wikipedia.org/wiki/Very-large-scale_integration

    Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.

  5. Lynn Conway - Wikipedia

    en.wikipedia.org/wiki/Lynn_Conway

    Lynn Ann Conway (January 2, 1938 – June 9, 2024) was an American computer scientist, electrical engineer, and transgender activist.. In the 1960s, while working at IBM, Conway invented generalized dynamic instruction handling, a key advancement used in out-of-order execution, used by most modern computer processors to improve performance.

  6. Shallow trench isolation - Wikipedia

    en.wikipedia.org/wiki/Shallow_trench_isolation

    [2] Certain semiconductor fabrication technologies also include deep trench isolation , a related feature often found in analog integrated circuits . The effect of the trench edge has given rise to what has recently been termed the "reverse narrow channel effect" [ 3 ] or "inverse narrow width effect". [ 4 ]

  7. Intel wins US appeal to overturn $2.18 billion VLSI patent ...

    www.aol.com/news/intel-wins-us-appeal-overturn...

    WASHINGTON (Reuters) -A U.S. appeals court on Monday threw out a $2.18 billion patent-infringement award won by patent owner VLSI Technology against Intel Corp, overturning one of the largest ...

  8. Drain-induced barrier lowering - Wikipedia

    en.wikipedia.org/wiki/Drain-induced_barrier_lowering

    Barrier lowering increases as channel length is reduced, even at zero applied drain bias, because the source and drain form p–n junctions with the body, and so have associated built-in depletion layers associated with them that become significant partners in charge balance at short channel lengths, even with no reverse bias applied to ...

  9. Magic (software) - Wikipedia

    en.wikipedia.org/wiki/Magic_(software)

    VLSI layout of an inverter circuit using Magic software. Magic is an electronic design automation (EDA) layout tool for very-large-scale integration (VLSI) integrated circuit (IC) originally written by John Ousterhout and his graduate students at UC Berkeley. Work began on the project in February 1983.