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With the introduction of high κ metal gates, a new degradation mechanism has become more important, referred to as PBTI (for positive bias temperature instabilities), which affects nMOS transistor when positively biased. In this case, no interface states are generated and 100% of the Vth degradation may be recovered.
Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.
The VLSI handbook (2nd ed.). CRC Press. ISBN 978-0-8493-4199-1. chapter 76. Brian Bailey; Grant Martin (2010). ESL Models and Their Application: Electronic System Level Design and Verification in Practice. Springer. ISBN 978-1-4419-0964-0. Frank Rogin; Rolf Drechsler (2010). Debugging at the Electronic System Level. Springer.
The effect of the trench edge has given rise to what has recently been termed the "reverse narrow channel effect" [3] or "inverse narrow width effect". [4] Basically, due to the electric field enhancement at the edge, it is easier to form a conducting channel (by inversion) at a lower voltage.
While working at Bell Labs in the early 1980s, Pakistani engineer Asad Abidi worked on the development of sub-micron MOSFET (metal–oxide–semiconductor field-effect transistor) VLSI (very large-scale integration) technology at the Advanced LSI Development Lab, along with Marty Lepselter, George E. Smith, and Harry Bol.
%PDF-1.5 %âãÏÓ 100 0 obj > endobj xref 100 62 0000000016 00000 n 0000002402 00000 n 0000002539 00000 n 0000001570 00000 n 0000002637 00000 n 0000002762 00000 n 0000003272 00000 n 0000003519 00000 n 0000003561 00000 n 0000004173 00000 n 0000005340 00000 n 0000005569 00000 n 0000005954 00000 n 0000006116 00000 n 0000006328 00000 n 0000006538 ...
The VLSI Project was a DARPA-program initiated by Robert Kahn in 1978 [1] that provided research funding to a wide variety of university-based teams in an effort to improve the state of the art in microprocessor design, then known as Very Large Scale Integration (VLSI).
Barrier lowering increases as channel length is reduced, even at zero applied drain bias, because the source and drain form p–n junctions with the body, and so have associated built-in depletion layers associated with them that become significant partners in charge balance at short channel lengths, even with no reverse bias applied to ...