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Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm. [1] It has a room temperature direct bandgap of approximately 0.73 eV. [1] [2] [3]
A simple cubic crystal has only one lattice constant, the distance between atoms, but in general lattices in three dimensions have six lattice constants: the lengths a, b, and c of the three cell edges meeting at a vertex, and the angles α, β, and γ between those edges. The crystal lattice parameters a, b, and c have the
Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
The lengths of principal axes/edges, of unit cell and angles between them are lattice constants, also called lattice parameters or cell parameters. The symmetry properties of crystal are described by the concept of space groups. [1] All possible symmetric arrangements of particles in three-dimensional space may be described by 230 space groups.
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy.
Aluminium arsenide is a III-V compound semiconductor material and is an advantageous material for the manufacture of optoelectronic devices, such as light emitting diodes. Aluminium arsenide can be prepared using well-known methods, such as liquid and vapor-phase epitaxy techniques or melt-growth techniques.
InP is used in lasers, sensitive photodetectors and modulators in the wavelength window typically used for telecommunications, i.e., 1550 nm wavelengths, as it is a direct bandgap III-V compound semiconductor material. The wavelength between about 1510 nm and 1600 nm has the lowest attenuation available on optical fibre (about 0.2 dB/km). [12]