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In computing, a word is any processor design's natural unit of data. A word is a fixed-sized datum handled as a unit by the instruction set or the hardware of the processor. . The number of bits or digits [a] in a word (the word size, word width, or word length) is an important characteristic of any specific processor design or computer architect
If needed, contents of the computer memory can be transferred to storage; a common way of doing this is through a memory management technique called virtual memory. Modern computer memory is implemented as semiconductor memory, [5] [6] where data is stored within memory cells built from MOS transistors and other components on an integrated ...
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 ( high voltage level) and reset to store a logic 0 (low voltage level).
Memory architecture describes the methods used to implement electronic computer data storage in a manner that is a combination of the fastest, most reliable, most durable, and least expensive way to store and retrieve information. Depending on the specific application, a compromise of one of these requirements may be necessary in order to ...
The number of levels in the memory hierarchy and the performance at each level has increased over time. The type of memory or storage components also change historically. [6] For example, the memory hierarchy of an Intel Haswell Mobile [7] processor circa 2013 is: Processor registers – the fastest possible access (usually 1 CPU cycle). A few ...
Semiconductor memory also has much faster access times than other types of data storage; a byte of data can be written to or read from semiconductor memory within a few nanoseconds, while access time for rotating storage such as hard disks is in the range of milliseconds.
The 1T-1C storage cell design in a FeRAM is similar in construction to the storage cell in DRAM, in that both cell types include one capacitor and one access transistor. In a DRAM cell capacitor, a linear dielectric is used, whereas in a FeRAM cell capacitor the dielectric structure includes ferroelectric material , typically lead zirconate ...
A memory bank is a part of cache memory that is addressed consecutively in the total set of memory banks, i.e., when data item a(n) is stored in bank b, data item a(n + 1) is stored in bank b + 1. Cache memory is divided in banks to evade the effects of the bank cycle time (see above) [=> missing "bank cycle" definition, above]. When data is ...