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The semiconductor used for carrier generation has usually a band-gap smaller than the photon energy, and the most common choice is pure germanium. [ 25 ] [ 26 ] Most detectors use a p–n junction for carrier extraction, however, detectors based on metal–semiconductor junctions (with germanium as the semiconductor) have been integrated into ...
The first practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector, a primitive semiconductor diode used in early radio receivers. Developments in quantum physics led in turn to the invention of the transistor in 1947 [ 7 ] and the integrated circuit in 1958.
The semiconductor industry is the aggregate of companies engaged in the design and fabrication of semiconductors and semiconductor devices, such as transistors and integrated circuits. Its roots can be traced to the invention of the transistor by Shockley , Brattain , and Bardeen at Bell Labs in 1948.
In ionizing radiation detection physics, a semiconductor detector is a device that uses a semiconductor (usually silicon or germanium) to measure the effect of incident charged particles or photons. Semiconductor detectors find broad application for radiation protection , gamma and X-ray spectrometry , and as particle detectors .
A challenge most critical to analog IC design involves the variability of the individual devices built on the semiconductor chip. Unlike board-level circuit design which permits the designer to select devices that have each been tested and binned according to value, the device values on an IC can vary widely which are uncontrollable by the ...
Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.
In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model , carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.
Each semiconductor region is connected to a terminal, appropriately labeled: emitter (E), base (B) and collector (C). The base is physically located between the emitter and the collector and is made from lightly doped, high-resistivity material. The collector surrounds the emitter region, making it almost impossible for the electrons injected ...