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The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]
As a result, the charge present on the gate retains charge balance by attracting more carriers into the channel, an effect equivalent to lowering the threshold voltage of the device. In effect, the channel becomes more attractive for electrons. In other words, the potential energy barrier for electrons in the channel is lowered. Hence the term ...
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
The Early effect, named after its discoverer James M. Early , is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage.
First edition. Electrons and Holes in Semiconductors with Applications to Transistor Electronics is a book by Nobel Prize winner William Shockley, [1] first published in 1950. . It was a primary source, and was used as the first textbook, for scientists and engineers learning the new field of semiconductors as applied to the development of the transis
In 1956, the three men were jointly awarded the Nobel Prize in Physics by King Gustaf VI Adolf of Sweden "for research on semiconductors and the discovery of the transistor effect." [8] Bardeen and Brattain were included for the discovery of the point-contact transistor; Shockley for the development of the junction transistor. Walter Brattain ...
A gate dielectric is a dielectric used between the gate and substrate of a field-effect transistor (such as a MOSFET). In state-of-the-art processes, the gate dielectric is subject to many constraints, including: Diagram of silicon dioxide gate dielectric transistor made by Frosch and Derrick in 1957 [1]
John Bardeen (/ b ɑːr ˈ d iː n /; May 23, 1908 – January 30, 1991) [2] was an American electrical engineer and theoretical physicist.He is the only person to be awarded the Nobel Prize in Physics twice: first in 1956 with William Shockley and Walter Brattain for the invention of the transistor; and again in 1972 with Leon N. Cooper and John Robert Schrieffer for a fundamental theory of ...