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An early example of a MEMS cantilever is the Resonistor, [7] [8] an electromechanical monolithic resonator. MEMS cantilevers are commonly fabricated from silicon (Si), silicon nitride (Si 3 N 4), or polymers. The fabrication process typically involves undercutting the cantilever structure to release it, often with an anisotropic wet or dry ...
With the exception of the removal of the sacrificial spacer, which requires critical point drying, the fabrication steps are similar to CMOS fabrication process steps. RF MEMS fabrication processes, unlike BST or PZT ferroelectric and MMIC fabrication processes, do not require electron beam lithography, MBE, or MOCVD.
A sacrificial layer is used to build complicated components, such as movable parts. For example, a suspended cantilever can be built by depositing and structuring a sacrificial layer, which is then selectively removed at the locations where the future beams must be attached to the substrate (i.e. the anchor points).
Simplified illustration of the process of fabrication of a CMOS inverter on p-type substrate in semiconductor microfabrication. Each etch step is detailed in the following image. The diagrams are not to scale, as in real devices, the gate, source, and drain contacts are not normally located in the same plane. Detail of an etch step.
It was used in IC fabrication for patterning the gate oxide until the process step was replaced by RIE. Hydrofluoric acid is considered one of the more dangerous acids in the cleanroom . Electrochemical etching (ECE) for dopant-selective removal of silicon is a common method to automate and to selectively control etching.
The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.
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