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The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for etching silicon. Gas pressure is typically maintained in a range between a few milli torr and a few hundred millitorr by adjusting gas flow rates and/or adjusting an exhaust orifice.
Organosilicon compounds are widely encountered in commercial products. Most common are antifoamers, caulks (sealant), adhesives, and coatings made from silicones . Other important uses include agricultural and plant control adjuvants commonly used in conjunction with herbicides and fungicides .
To etch through a 0.5 mm silicon wafer, for example, 100–1000 etch/deposit steps are needed. The two-phase process causes the sidewalls to undulate with an amplitude of about 100–500 nm . The cycle time can be adjusted: short cycles yield smoother walls, and long cycles yield a higher etch rate.
The products cure from a liquid or gel state to a solid. Curing entails crosslinking by the hydrolysis of silyl ethers: 2 RSi(OCH 3) 2 R' + H 2 O → [RSi(OCH 3)R'] 2 O + 2 CH 3 OH. In a hydrolysis reaction, a catalyst and moisture is required to form an intermediate silanol, which then reacts to form siloxane linkages in a condensation process ...
Buffered oxide etch is commonly used for more controllable etching. [1] Buffering HF with NH 4 F results in a solution with a more stable pH; thus, more stable concentrations of HF and HF − 2, and a more stable etch rate. [2] Some oxides produce insoluble products in HF solutions.
If the etch is intended to make a cavity in a material, the depth of the cavity may be controlled approximately using the etching time and the known etch rate. More often, though, etching must entirely remove the top layer of a multilayer structure, without damaging the underlying or masking layers.