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Because base–emitter voltage varies as the logarithm of the base–emitter and collector–emitter currents, a BJT can also be used to compute logarithms and anti-logarithms. A diode can also perform these nonlinear functions but the transistor provides more circuit flexibility.
Figure 3: PNP version of the emitter-follower circuit, all polarities are reversed. A small voltage change on the input terminal will be replicated at the output (depending slightly on the transistor's gain and the value of the load resistance; see gain formula below).
For an NPN open emitter output, the collector is connected to the positive voltage rail, so the emitter outputs a high voltage when the transistor is on and is hi-Z when off. For a PNP open emitter output, the collector is connected to the low voltage supply, so the emitter outputs a low voltage when the transistor is on and is hi-Z when off.
A bipolar junction transistor (BJT) has terminals labeled base, collector and emitter. A small current at the base terminal, flowing between the base and the emitter, can control or switch a much larger current between the collector and emitter. A field-effect transistor (FET) has terminals labeled gate, source and drain. A voltage at the gate ...
The output transistor is not allowed to saturate (i.e. its base–collector junction must remain reverse-biased) because the first transistor, when saturated, establishes full (100%) parallel negative feedback between the collector and the base of the second transistor. [3] Since collector–emitter voltage is equal to the sum of its own base ...
When looking at the flat side with the leads pointed downward, the three leads emerging from the case are, from left to right, the emitter, base, and collector leads. The 2N3906 is specified by a collector current of 200 mA, collector-base and collector-emitter voltages of 40 V, for power dissipation of 300 mW.
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width, thereby decreasing the width of the charge carrier portion of the ...
TIP31 transistors are designated as TIP31A, TIP31B, TIP31 to indicate increasing collector-base and collector-emitter breakdown voltage ratings. The TIP31 is packaged in a TO-220 case. TIP stands for Texas Instruments (Plastic) Power [6] transistor. 31 is an arbitrary identifier. [7] These ratings are for the Fairchild TIP31 series.