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A p–n junction diode. The circuit symbol is also shown. A p–n junction is a combination of two types of semiconductor materials, p-type and n-type, in a single crystal. The "n" (negative) side contains freely-moving electrons, while the "p" (positive) side contains freely-moving electron holes.
This simple diode clamp will clamp the negative peaks of the incoming waveform to the common rail voltage. A diode clamp circuit can take a periodic alternating current signal that oscillates between positive and negative values, and vertically displace it such that either the positive or the negative peaks occur at a prescribed level. The ...
The width of the depletion region adjusts so the negative acceptor charge on the p-side exactly balances the positive donor charge on the n-side, so there is no electric field outside the depletion region on either side. In this band configuration no voltage is applied and no current flows through the diode.
For example, reversing the current direction in a Daniell galvanic cell converts it into an electrolytic cell [1] where the copper electrode is the positive terminal and also the anode. In a diode , the cathode is the negative terminal at the pointed end of the arrow symbol, where current flows out of the device.
In the following examples, the anode is negative in a device that provides power, and positive in a device that consumes power: In a discharging battery or galvanic cell (diagram on left), the anode is the negative terminal: it is where conventional current flows into the cell. This inward current is carried externally by electrons moving outwards.
The PIN diode obeys the standard diode equation for low-frequency signals. At higher frequencies, the diode looks like an almost perfect (very linear, even for large signals) resistor. The P-I-N diode has a relatively large stored charge adrift in a thick intrinsic region. At a low-enough frequency, the stored charge can be fully swept and the ...
Forward bias (applying a positive voltage to the P-side with respect to the N-side) narrows the depletion region and lowers the barrier to carrier injection (shown in the figure to the right). In more detail, majority carriers get some energy from the bias field, enabling them to go into the region and neutralize opposite charges.
Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued : Devices which have hysteresis ; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops.