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The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action.
A Schottky diode is a single metal–semiconductor junction, used for its rectifying properties. Schottky diodes are often the most suitable kind of diode when a low forward voltage drop is desired, such as in a high-efficiency DC power supply. Also, because of their majority-carrier conduction mechanism, Schottky diodes can achieve greater ...
The Schottky diode, also known as the Schottky-barrier diode, was theorized for years, but was first practically realized as a result of the work of Atalla and Kahng during 1960–1961. [ 23 ] [ 24 ] They published their results in 1962 and called their device the "hot electron" triode structure with semiconductor-metal emitter. [ 25 ]
A schematic symbol for Schottky diodes 1N5822 Schottky diode with cut-open packaging. The semiconductor in the center makes a Schottky barrier against one metal electrode (providing rectifying action) and an ohmic contact with the other electrode. SS14 schottky diode in DO-214AC (SMA) (SOD-106) surface-mount package version of 1N5819 [1]
In solid junctions, we can take as a reference the metal Fermi level, if the work function is known, which provides a full energy diagram in the physical scale. The Mott–Schottky plot is sensitive to the electrode surface in contact with solution, see Figure 2.
The German physicist Walter H. Schottky formulated a theory predicting the Schottky effect, which led to the Schottky diode and later Schottky transistors. For the same power dissipation, Schottky transistors have a faster switching speed than conventional transistors because the Schottky diode prevents the transistor from saturating and ...
Semiconductor characterization techniques are used to characterize a semiconductor material or device (p–n junction, Schottky diode, solar cell, etc.).Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.
When forward-biased, a Schottky diode's voltage drop 0.25 V is much less than a standard silicon diode's 0.6 V. In a standard saturated transistor, the base-to-collector voltage is 0.6 V. In a Schottky transistor, the Schottky diode shunts current from the base into the collector before the transistor goes into saturation.