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The first DDR4 memory module prototype was manufactured by Samsung and announced in January 2011. [a] Physical comparison of DDR, DDR2, DDR3, and DDR4 SDRAM Front and back of 8 GB [1] DDR4 memory modules. 2005: Standards body JEDEC began working on a successor to DDR3 around 2005, [14] about 2 years before the launch of DDR3 in 2007.
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
Quad-channel memory debuted on Intel's Nehalem-EX LGA 1567 platform of Xeon CPUs, aka Beckton in 2010, and was introduced to the high end product line on the Intel X79 LGA 2011 platform with Sandy Bridge-E in late 2011. DDR4 replaced DDR3 on the Intel X99 LGA 2011 platform, aka Haswell-E, and is also used in AMD's Threadripper platform. [16]
It is for this reason that DDR3-2666 CL9 has a smaller absolute CAS latency than DDR3-2000 CL7 memory. Both for DDR3 and DDR4, the four timings described earlier are not the only relevant timings and give a very short overview of the performance of memory. The full memory timings of a memory module are stored inside of a module's SPD chip.
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips.
Double Data Rate 5 Synchronous Dynamic Random-Access Memory (DDR5 SDRAM) is a type of synchronous dynamic random-access memory.Compared to its predecessor DDR4 SDRAM, DDR5 was planned to reduce power consumption, while doubling bandwidth. [5]