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In today's technology, random-access memory takes the form of integrated circuit (IC) chips with MOS (metal–oxide–semiconductor) memory cells. RAM is normally associated with volatile types of memory where stored information is lost if power is removed.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
The memory cell is the fundamental building block of memory. It can be implemented using different technologies, such as bipolar, MOS, and other semiconductor devices. It can also be built from magnetic material such as ferrite cores or magnetic bubbles. [1] Regardless of the implementation technology used, the purpose of the binary memory cell ...
The two main types of volatile random-access memory (RAM) are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963, [9] followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. [13]
A random-access machine (RAM) is an abstract computational-machine model identical to a multiple-register counter machine with the addition of indirect addressing. At the discretion of instruction from its finite state machine 's TABLE, the machine derives a "target" register's address either (i) directly from the instruction itself, or (ii ...
Historical. v. t. e. Computational RAM (C-RAM) is random-access memory with processing elements integrated on the same chip. This enables C-RAM to be used as a SIMD computer. It also can be used to more efficiently use memory bandwidth within a memory chip. The general technique of doing computations in memory is called Processing-In-Memory (PIM).