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In 1823 for the first time Jacob Berzelius discovered silicon tetrachloride (SiCl 4). [27] ... it accounts for 80% of the world's use of free silicon.
The Danish physicist Valdemar Poulsen creates the world's first magnetic recording and reproduction, using a 1 mm thick steel wire as a magnetizable carrier. Nikola Tesla publicly demonstrated the first wireless remote control of a model ship. 1899: The dog "Nipper" is used in "His Master's Voice", the trademark for gramophones and records.
Berzelius is credited with discovering the chemical elements cerium and selenium and with being the first to isolate silicon, thorium, titanium and zirconium. Berzelius discovered cerium in 1803 [29] and selenium in 1817. [30] Berzelius also discovered how to isolate silicon in 1824, [31] and thorium in 1824.
2012: Higgs boson is discovered at CERN (confirmed to 99.999% certainty) 2012: Photonic molecules are discovered at MIT; 2014: Exotic hadrons are discovered at the LHCb; 2014: Photonic metamaterials are discovered to make passive daytime radiative cooling possible by Raman et al. [135] [136] 2016: The LIGO team detects gravitational waves from ...
Scientists have made astonishingly pure silicon – a new breakthrough material that could finally make quantum computers possible. A new technique allows engineers to make highly purified silicon ...
Ramdohr (1936) discovered that the type material of schapbachite (Ag 0.4 Pb 0.2 Bi 0.4 S) was a mixture of galena (PbS) and matildite (AgBiS 2). [32] It was discredited (1982) as it was found unstable at 'standard temperature and pressure' (STP). [33] It was revalidated (2004) as Pb-bearing schabachite is stable at STP. [34]
Some silicon analogues of imines, with a Si=N double bond, are known: the first found was Bu t 2 Si=N–SiBu t 3, which was discovered in 1986. [21] Silicon carbide. Silicon carbide (SiC) was first made by Edward Goodrich Acheson in 1891, who named it carborundum to reference its intermediate hardness and abrasive power between diamond (an ...
The MOSFET was invented at Bell Labs between 1955 and 1960, after Frosch and Derick discovered surface passivation by silicon dioxide and used their finding to create the first planar transistors, the first in which drain and source were adjacent at the same surface.