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  2. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. ... Alpha and beta are related by the ...

  3. Bipolar transistor biasing - Wikipedia

    en.wikipedia.org/wiki/Bipolar_transistor_biasing

    A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.

  4. Hybrid-pi model - Wikipedia

    en.wikipedia.org/wiki/Hybrid-pi_model

    Full hybrid-pi model. The full model introduces the virtual terminal, B′, so that the base spreading resistance, r bb, (the bulk resistance between the base contact and the active region of the base under the emitter) and r b′e (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately.

  5. Common base - Wikipedia

    en.wikipedia.org/wiki/Common_base

    At low frequencies and under small-signal conditions, the circuit in Figure 1 can be represented by that in Figure 2, where the hybrid-pi model for the BJT has been employed. The input signal is represented by a Thévenin voltage source v s with a series resistance R s and the load is a resistor R L. This circuit can be used to derive the ...

  6. 2N3904 - Wikipedia

    en.wikipedia.org/wiki/2N3904

    The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor.

  7. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948. [10] Later the similar thyristor was proposed by William Shockley in 1950 and developed in 1956 by power engineers at General Electric (GE). The metal–oxide–semiconductor field-effect transistor (MOSFET) was also invented at Bell Labs.

  8. Alpha vs. beta in investing: What’s the difference? - AOL

    www.aol.com/finance/alpha-vs-beta-investing...

    Alpha is a way to measure excess return, while beta is used to measure the volatility, or risk, of an asset. Beta might also be referred to as the return you can earn by passively owning the market.

  9. Talk:Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Talk:Bipolar_junction...

    However, that's not the reason I reverted you. You have not added an introduction to bipolar junction transistor as you claim. You have added an introduction to transistor. It does not belong in this article. It also does not belong in the lede. The lede is mean to be a summary of the article. Adding material that is not in the body of the ...