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The minimum subthreshold swing of a conventional device can be found by letting and/or , which yield , = (known as thermionic limit) and 60 mV/dec at room temperature (300 K). A typical experimental subthreshold swing for a scaled MOSFET at room temperature is ~70 mV/dec, slightly degraded due to short-channel MOSFET parasitics.
Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. [1]
The transistor speed is proportional to the on-current: The higher the on-current, the faster a transistor will be able to charge its fan-out (consecutive capacitive load). For a given transistor speed and a maximum acceptable subthreshold leakage, the subthreshold slope thus defines a certain minimal threshold voltage.
As channel length is reduced, the effects of DIBL in the subthreshold region (weak inversion) show up initially as a simple translation of the subthreshold current vs. gate bias curve with change in drain-voltage, which can be modeled as a simple change in threshold voltage with drain bias. However, at shorter lengths the slope of the current ...
In the four swing states that make it easy to track political alignment in voter registrations—Arizona, Nevada, North Carolina and Pennsylvania—Democrats have seen their slice of the overall ...
Tim Allen’s new ABC sitcom “Shifting Gears” is revving its ratings engine. According to ABC, the series now stands as the most-watched ABC series premiere on streaming to date, via first ...
(The Center Square) – Mass transit legislation is once again on the table for members of the Illinois General Assembly. State Rep. Eva-Dina Delgado, D-Chicago, introduced House Bill 3778. The ...
The current–voltage characteristics of four devices: a resistor with large resistance, a resistor with small resistance, a P–N junction diode, and a battery with nonzero internal resistance.