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  2. List of semiconductor materials - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).

  3. List of semiconductor scale examples - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations

  4. Interconnect (integrated circuits) - Wikipedia

    en.wikipedia.org/wiki/Interconnect_(integrated...

    The material interconnects are made from depends on many factors. Chemical and mechanical compatibility with the semiconductor substrate and the dielectric between the levels of interconnect is necessary, otherwise barrier layers are needed. Suitability for fabrication is also required; some chemistries and processes prevent the integration of ...

  5. Through-silicon via - Wikipedia

    en.wikipedia.org/wiki/Through-silicon_via

    Visualizing via-first, via-middle and via-last TSVs. Dictated by the manufacturing process, there exist three different types of TSVs: via-first TSVs are fabricated before the individual component (transistors, capacitors, resistors, etc.) are patterned (front end of line, FEOL), via-middle TSVs are fabricated after the individual component are patterned but before the metal layers (back-end ...

  6. Back end of line - Wikipedia

    en.wikipedia.org/wiki/Back_end_of_line

    The BEOL process deposits metalization layers on the silicion to interconnect the individual devices generated during FEOL (bottom). CMOS fabrication process. Back end of the line or back end of line (BEOL) is a process in semiconductor device fabrication that consists of depositing metal interconnect layers onto a wafer already patterned with devices.

  7. Very-large-scale integration - Wikipedia

    en.wikipedia.org/wiki/Very-large-scale_integration

    Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.

  8. Semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device

    A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in

  9. List of MOSFET applications - Wikipedia

    en.wikipedia.org/wiki/List_of_MOSFET_applications

    MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.