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The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948. [10] Later the similar thyristor was proposed by William Shockley in 1950 and developed in 1956 by power engineers at General Electric (GE). The metal–oxide–semiconductor field-effect transistor (MOSFET) was also invented at Bell Labs.
The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948, [12] was for three decades the device of choice in the design of discrete and integrated circuits. Nowadays, the use of the BJT has declined in favor of CMOS technology in the design of digital integrated circuits.
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Figure 2: Adding an emitter resistor decreases gain, but increases linearity and stability. Common-emitter amplifiers give the amplifier an inverted output and can have a very high gain that may vary widely from one transistor to the next.
Figure 2: A negative-feedback amplifier. The circuit can be explained by viewing the transistor as being under the control of negative feedback.From this viewpoint, a common-collector stage (Fig. 1) is an amplifier with full series negative feedback.