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As quoted in an online version of: David R. Lide (ed), CRC Handbook of Chemistry and Physics, 84th Edition.CRC Press. Boca Raton, Florida, 2003; Section 4, Properties of the Elements and Inorganic Compounds; Physical Properties of the Rare Earth Metals
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...
Infobox references. Nickel silicides include several intermetallic compounds of nickel and silicon. Nickel silicides are important in microelectronics as they form at junctions of nickel and silicon. Additionally thin layers of nickel silicides may have application in imparting surface resistance to nickel alloys.
The first of these quantities is used in atomic physics, the second in chemistry, but both refer to the same basic property of the element. To convert from "value of ionization energy" to the corresponding "value of molar ionization energy", the conversion is: 1 eV = 96.48534 kJ/mol. 1 kJ/mol = 0.0103642688 eV [12]
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as Boron and Antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
metalloids, e.g. silicon, germanium, arsenic, antimony and tellurium. Homogeneous and heterogeneous solid solutions of metals, and interstitial compounds such as the carbides and nitrides are excluded under this definition. However, interstitial intermetallic compounds are included, as are alloys of intermetallic compounds with a metal.
An intrinsic semiconductor, also called a pure semiconductor, undoped semiconductor or i-type semiconductor, is a semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities. In intrinsic semiconductors the number ...
Let K0 is the normal conductivity at one bar (10 5 N/m 2) pressure, Ke is its conductivity at special pressure and/or length scale. Let d is a plate distance in meters, P is an air pressure in Pascals (N/m 2), T is temperature Kelvin, C is this Lasance constant 7.6 ⋅ 10 −5 m ⋅ K/N and PP is the product P ⋅ d/T.