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Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging.NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET.
The following table is split into two groups based on whether it has a graphical visual interface or not. The latter requires a separate program to provide that feature, such as Qucs-S, [1] Oregano, [2] or a schematic design application that supports external simulators, such as KiCad or gEDA.
An application-specific instruction set processor (ASIP) is a component used in system on a chip design. The instruction set architecture of an ASIP is tailored to benefit a specific application. This specialization of the core provides a tradeoff between the flexibility of a general purpose central processing unit (CPU) and the performance of ...
Applications of Field-Programmable Gate Arrays in Scientific Research. Taylor & Francis. ISBN 978-1-4398-4133-4. Wirth, Niklaus (1995). Digital Circuit Design An Introduction Textbook. Springer. ISBN 978-3-540-58577-0. Mitra, Jubin (2018). "An FPGA-Based Phase Measurement System". IEEE Transactions on Very Large Scale Integration (VLSI) Systems ...
The effect of the trench edge has given rise to what has recently been termed the "reverse narrow channel effect" [3] or "inverse narrow width effect". [4] Basically, due to the electric field enhancement at the edge, it is easier to form a conducting channel (by inversion) at a lower voltage.
VLSI layout of an inverter circuit using Magic software. Magic is an electronic design automation (EDA) layout tool for very-large-scale integration (VLSI) integrated circuit (IC) originally written by John Ousterhout and his graduate students at UC Berkeley. Work began on the project in February 1983.
WASHINGTON (Reuters) -A U.S. appeals court on Monday threw out a $2.18 billion patent-infringement award won by patent owner VLSI Technology against Intel Corp, overturning one of the largest ...
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.