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In ionizing radiation detection physics, a semiconductor detector is a device that uses a semiconductor (usually silicon or germanium) to measure the effect of incident charged particles or photons. Semiconductor detectors find broad application for radiation protection , gamma and X-ray spectrometry , and as particle detectors .
Based on device structure, photodetectors can be classified into the following categories: MSM Photodetector: A metal-semiconductor-metal (MSM) photodetector consists of a semiconductor layer sandwiched between two metal electrodes. The metal electrodes are interdigitated, forming a series of alternating fingers or grids.
Breathalyzer; Carbon dioxide sensor; Carbon monoxide detector; Catalytic bead sensor; Chemical field-effect transistor; Chemiresistor; Electrochemical gas sensor
Hybrid pixel detectors are a type of ionizing radiation detector consisting of an array of diodes based on semiconductor technology and their associated electronics. The term “hybrid” stems from the fact that the two main elements from which these devices are built, the semiconductor sensor and the readout chip (also known as application-specific integrated circuit or ASIC), are ...
Outlines of some packaged semiconductor devices. A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor ...
Charge coupled device (CCD) cameras were first applied to transmission electron microscopy in the 1980s and later became widespread. [3] [4] For use in a TEM, CCDs are typically coupled with a scintillator such as single crystal Yttrium aluminium garnet (YAG) in which electrons from the electron beam are converted to photons, which are then transferred to the sensor of the CCD via a fiber ...
The devices are two chips that are put together like a sandwich: one chip contains detector elements made in InGaAs or HgCdTe, and the other chip is typically made of silicon and is used to read out the photodetectors. The exact date of origin of these devices is classified, but they were in use by the mid-1980s. [citation needed]
Like other solid state X-ray detectors, silicon drift detectors measure the energy of an incoming photon by the amount of ionization it produces in the detector material. This varying ionization produces varying charge, which the detector electronics measure for each incoming photon. [ 1 ]