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In ionizing radiation detection physics, a semiconductor detector is a device that uses a semiconductor (usually silicon or germanium) to measure the effect of incident charged particles or photons. Semiconductor detectors find broad application for radiation protection , gamma and X-ray spectrometry , and as particle detectors .
Unlike electronic integration where silicon is the dominant material, system photonic integrated circuits have been fabricated from a variety of material systems, including electro-optic crystals such as lithium niobate, silica on silicon, silicon on insulator, various polymers, and semiconductor materials which are used to make semiconductor lasers such as GaAs and InP.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
Based on device structure, photodetectors can be classified into the following categories: MSM Photodetector: A metal-semiconductor-metal (MSM) photodetector consists of a semiconductor layer sandwiched between two metal electrodes. The metal electrodes are interdigitated, forming a series of alternating fingers or grids.
Hybrid pixel detectors are a type of ionizing radiation detector consisting of an array of diodes based on semiconductor technology and their associated electronics. The term “hybrid” stems from the fact that the two main elements from which these devices are built, the semiconductor sensor and the readout chip (also known as application-specific integrated circuit or ASIC), are ...
In a CCD image sensor, pixels are represented by p-doped metal–oxide–semiconductor (MOS) capacitors.These MOS capacitors, the basic building blocks of a CCD, [1] are biased above the threshold for inversion when image acquisition begins, allowing the conversion of incoming photons into electron charges at the semiconductor-oxide interface; the CCD is then used to read out these charges.
An active-pixel sensor (APS) is an image sensor, which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. [1] [2] In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as ...
Like other solid state X-ray detectors, silicon drift detectors measure the energy of an incoming photon by the amount of ionization it produces in the detector material. This varying ionization produces varying charge, which the detector electronics measure for each incoming photon. [ 1 ]